Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-12-27

2005-12-27

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S523000

Reexamination Certificate

active

06979611

ABSTRACT:
In a silicon substrate having a contact hole in a device region, the contact resistance between the contact plug and the silicon substrate is reduced by preventing formation of an undesirable layer therebetween by treating the exposed surface of the substrate before forming the contact plug. Further, a two-layered contact plug consisting of a first contact plug layer having high impurity concentration and a second contact plug layer having low impurity concentration, on the interlayer insulating film including the exposed surface of the substrate. The interface between the silicon substrate and the contact plug is thermally treated at low temperature, and the first contact plug layer having high impurity concentration and the second contact plug layer having low impurity concentration, are formed, so that the resistance between the silicon substrate and the contact plug can be reduced, thereby increasing the operation speed of the device. thereby increasing the operation speed of the device.

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