Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-08-09

2005-08-09

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S787000, C438S778000

Reexamination Certificate

active

06927111

ABSTRACT:
A method for fabricating a semiconductor device comprises the steps of: forming a polysilicon film26on a silicon substrate10; removing a natural oxide film28on the surface of the polysilicon film26; forming a homogeneous chemical oxide film30on the surface of the polsysilicon film26having the natural oxide film28removed; forming a silicon oxide film32to be used as a hard mask on the polysilicon film26with the chemical oxide film30formed on; and etching the polysilicon film26with the silicon oxide film32as a mask to form a gate electrode16of the polysilicon film26.

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patent: 2003/0227047 (2003-12-01), Hsu et al.
Wei W. Lee, et al.; Fabrication of 0.06 μm Poly-Si Gate Using DUV Lithography with a Designed SixOyNzFilm as an Arc and Hardmask; 1997 Symposium on VLSI Technology Digest of Technical Papers; pp. 131 & 132; 1997.

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