Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1996-11-06

1999-02-23

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438275, 438278, 438303, 438305, H01L 27092, H01L 29784

Patent

active

058743308

ABSTRACT:
A method for fabricating a semiconductor device having a substrate includes the steps of defining a first region and a second region in the substrate, forming a gate insulator over the substrate at each of the first and second regions, forming a gate electrode over the gate insulator and forming impurity regions in the substrate at adjacent sides of the gate electrode in each of the first and second regions, forming a first insulating layer on top and at sides of the gate electrode in the first region, forming a second insulating layer on the first insulating layer at the first region and on the gate electrode of the second region, removing the second insulating layer by selective etching and forming gate sidewalls at the second region, and forming lightly doped drain areas by injecting ions using the gate sidewalls at the second region and the second insulating layer at the first region as masks.

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patent: 5021353 (1991-06-01), Lowrey et al.
patent: 5155056 (1992-10-01), Jeong-Gyoo
patent: 5324680 (1994-06-01), Lee et al.
patent: 5371026 (1994-12-01), Hayden et al.
patent: 5405791 (1995-04-01), Anmad et al.
patent: 5696016 (1997-12-01), Chen et al.
Stanley Wolf Silicon Processing For the VSLI ERA vol. 3 Lattice Press pp. 609-611, 635, 1995.

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