Method for fabricating self-aligned double layered...

Details Method for fabricating self-aligned double layered... Method for fabricating self-aligned double layered...

2008-07-01

2008-07-01

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21680, C438S593000, C438S150000

Reexamination Certificate

active

07393745

ABSTRACT:
A nanocrystal memory element and a method for fabricating the same are proposed. The fabricating method involves selectively oxidizing polysilicon not disposed beneath and not covered with a plurality of metal nanocrystals, and leaving intact the polysilicon disposed beneath and thereby covered with the plurality of metal nanocrystals, with a view to forming double layered silicon-metal nanocrystals by self-alignment.

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Ryuji Ohba, Naoharu Sugiyama, Ken Uchida, Junji Koga and Akira Toriumi, “Non-Volatile Si Quantum Memory With Self-Aligned Doubly-Stacked Dots,” Electron Devices Meeting, 2000. IEDM Technical Digest, International Publication Date: 2000; (c) 2000 IEEE, pp. 313-316, ISBN 0-7803-6438-4.

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