Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-17
2006-10-17
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S618000, C438S688000, C257SE21508
Reexamination Certificate
active
07122458
ABSTRACT:
A method for fabricating a pad redistribution layer. First, at least one bonding pad exposed by a first passivation layer is provided. A diffusion barrier layer and a seed layer are then formed over the first passivation layer and the bonding pad. A patterned mask layer is then formed over the seed layer to expose a portion thereof over the bonding pad, and a metal layer is then formed thereon. A sacrificial layer is then formed over the substrate and the sacrificial layer over the patterned mask layer is removed. The conductive film exposed by the metal layer and the remaining sacrificial layer is then removed, leaving a pad redistribution layer for the bonding pad.
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patent: 6511901 (2003-01-01), Lam et al.
patent: 6590295 (2003-07-01), Liao et al.
patent: 6756671 (2004-06-01), Lee et al.
patent: 2003/0134496 (2003-07-01), Lee et al.
Cheng Chia-Jen
Huang Li-Chuan
Lin Tzu-Han
Lo Chun-Yen
Su Boe
Sarkar Asok K.
Thomas Kayden Horstemeyer & Risley
Yevsikov Victor V.
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