Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-18
2006-07-18
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S030000, C438S157000, C438S099000, C216S002000, C216S005000, C216S013000, C216S017000, C216S023000, C216S024000, C216S067000, C359S245000, C359S246000, C359S254000, C359S290000, C359S291000
Reexamination Certificate
active
07078293
ABSTRACT:
A method for fabricating an optical interference display cell is described. A first electrode and a sacrificial layer are sequentially formed on a transparent substrate and at least two openings are formed in the first electrode and the sacrificial layer to define a position of the optical interference display cell. An insulated heat-resistant inorganic supporter is formed in each of the openings. A second electrode is formed on the sacrificial layer and the supporters. Finally, a remote plasma etching process is used for removing the sacrificial layer.
REFERENCES:
patent: 5835255 (1998-11-01), Miles
patent: 6870654 (2005-03-01), Lin et al.
patent: 2004102022 (2004-04-01), None
Lin Wen-Jian
Tsai Hsiung-Kuang
Baker & Hostetler LLP
George Patricia
Norton Nadine G.
Prime View International Co. Ltd.
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