Method for fabricating optical interference display cell

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S396000, C438S030000, C438S157000, C438S099000, C216S002000, C216S005000, C216S013000, C216S017000, C216S023000, C216S024000, C216S067000, C359S245000, C359S246000, C359S254000, C359S290000, C359S291000

Reexamination Certificate

active

07078293

ABSTRACT:
A method for fabricating an optical interference display cell is described. A first electrode and a sacrificial layer are sequentially formed on a transparent substrate and at least two openings are formed in the first electrode and the sacrificial layer to define a position of the optical interference display cell. An insulated heat-resistant inorganic supporter is formed in each of the openings. A second electrode is formed on the sacrificial layer and the supporters. Finally, a remote plasma etching process is used for removing the sacrificial layer.

REFERENCES:
patent: 5835255 (1998-11-01), Miles
patent: 6870654 (2005-03-01), Lin et al.
patent: 2004102022 (2004-04-01), None

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