Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1994-09-20
1998-06-16
Dang, Trung
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438605, 438606, H01L 2128, H01L 213205
Patent
active
057670072
ABSTRACT:
An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n.sup.+ -type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300.degree. C. for 30 minutes and next at, e.g. 650.degree. C. for one second to fabricate an ohmic electrode.
REFERENCES:
patent: 4796082 (1989-01-01), Murakami et al.
patent: 4849802 (1989-07-01), Jackson et al.
patent: 5027187 (1991-06-01), O'Mara, Jr. et al.
Journal of Applied Physics, vol. 68, No. 5, Sep. 1, 1990, pp. 2475-2481, XP0000108786, "Thermally Stable Ohmic Contacts to N-Type GaAs. VIII. Sputter-Deposited InAs Contacts".
Patent Abstracts of Japan, vol. 13, No. 439, (E-827), Oct. 3, 1989, & JP 01 166556A (Hitachi Ltd.), Jun. 30, 1989.
IBM Technical Disclosure Bulletin, vol. 34, No. 1, Jun. 1, 1991, New York, U.S., pp. 130-131, XP000210152, "Thermally Stable Low Au Content Ohmic Contact/Diffusion Barrier to N-type GaAs."
Murakami et al., "Thermal Stable . . . P-Type Gallium Arsenide" Chemical Abstracts, vol. 115, No. 1, p. 19498, Jul. 1991.
Kim et al; "Thermal Stable . . . InAs Contacts", J. Appl Phys. 68(5) Sep. 1990; pp. 2475-2481.
Wright et al.; "In Situ Contacts to GaAs Based on InAs"; Appl. Phys. Lett 49(22), Dec. 1986, pp. 1545-1547.
Murakami et al; "Thermal Stable . . . NiInw Ohmic Contacts"; J. Appl. Phys 68(5), Sep. 1990, pp. 2468-2474.
Murakami Masanori
Oku Takeo
Otsuki Akira
Uchibori Chihiro
Wada Masaru
Dang Trung
Sony Corporation
LandOfFree
Method for fabricating ohmic electrode and multi-layered structu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating ohmic electrode and multi-layered structu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating ohmic electrode and multi-layered structu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1725535