Method of forming high density capping layers for copper interco

Details Method of forming high density capping layers for copper interco Method of forming high density capping layers for copper interco

1998-12-09

2000-11-28

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438687, 438627, 438628, 438643, 204192, 204298, 156643, 156646, 437196, 437198, 437200, H01L 2144

Patent

active

061535230

ABSTRACT:
The adhesion of a barrier or capping layer to a Cu or Cu alloy interconnect member is significantly enhanced by treating the exposed surface of the Cu or Cu alloy interconnect member, after CMP, with an ammonia-containing plasma and then depositing the capping layer, e.g., silicon nitride, under high density plasma conditions at an elevated temperature, such as about 450.degree. C. to about 650.degree. C., e.g. about 450.degree. C. to about 550.degree. C. High density plasma deposition at such elevated temperatures increases the surface roughness of the exposed Cu metallization, thereby further increasing adhesion of the silicon nitride capping layer and increasing the density of the silicon nitride capping layer, thereby improving its etch stop characteristics.

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patent: 5343064 (1994-08-01), Spangler et al.
patent: 5413687 (1995-05-01), Barton et al.
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5621241 (1997-04-01), Jain
patent: 5693563 (1997-12-01), Teong
patent: 5893752 (1999-04-01), Zhang et al.

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