Method for fabricating nonvolatile memory device using disposabl

Details Method for fabricating nonvolatile memory device using disposabl Method for fabricating nonvolatile memory device using disposabl

1997-01-03

1999-03-09

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 218247

Patent

active

058799893

ABSTRACT:
A nonvolatile memory device includes: a substrate having field and active regions; a field insulating layer formed on the field region; a first gate insulating layer formed on the active region; a floating gate formed on the first gate insulating layer and on a portion of the field insulating layer, the portion extending from the first gate insulating layer, the floating gate being separated from the field insulating layer; a second gate insulating layer formed on the surface of the floating gate; a control gate formed on the second gate insulating layer; and an impurity region formed in a portion of the substrate, the portion being placed on both sides of the control gate.

REFERENCES:
patent: 5143860 (1992-09-01), Mitchell et al.
patent: 5378643 (1995-01-01), Ajika et al.
patent: 5395779 (1995-03-01), Hong
patent: 5418741 (1995-05-01), Gill
patent: 5658814 (1997-08-01), Lee

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