Method for fabricating non-volatile memory device with...

Details Method for fabricating non-volatile memory device with... Method for fabricating non-volatile memory device with...

2011-04-05

2011-04-05

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S292000, C438S308000, C257SE21422

Reexamination Certificate

active

07919371

ABSTRACT:
A method for fabricating a non-volatile memory device with a charge trapping layer wherein a tunneling layer, a charge trapping layer, a blocking layer, and a control gate electrode are formed on a semiconductor substrate. A temperature of the control gate electrode is increased by applying a magnetic field to the control gate electrode. The blocking layer is densified by allowing the increased temperature to be transferred to the blocking layer contacting the control gate electrode.

REFERENCES:
patent: 2007/0138576 (2007-06-01), Mizukami et al.
patent: 2007/0259497 (2007-11-01), Wong et al.
patent: 10-2001-0008844 (2001-02-01), None
patent: 10-2005-0061220 (2005-06-01), None
patent: 10-0753079 (2007-08-01), None

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