Method for fabricating nitride read-only memory

Details Method for fabricating nitride read-only memory Method for fabricating nitride read-only memory

2006-04-11

2006-04-11

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S216000, C438S591000

Reexamination Certificate

active

07026216

ABSTRACT:
A method for fabricating a nitride read-only memory is described. An ONO stacked layer and a protective layer are sequentially formed on a substrate. A patterning/etching process is performed to pattern the protective layer and the ONO stacked layer to expose a portion of the substrate. Thereafter, the protective layer is removed by using wet etching. An ion implantation is performed to form buried bit lines in the exposed substrate, and then an insulator is formed on each buried bit line. A plurality of word lines are formed on the substrate crossing over the buried bit lines.

REFERENCES:
patent: 6376341 (2002-04-01), Kluth et al.
patent: 6436778 (2002-08-01), Fang et al.
patent: 6538270 (2003-03-01), Randolph et al.
Wolf et al., Silicon Processing for the VLSI Era, 1986, Lattice Press, vol. 1, pp. 532-534.

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