Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-20
2007-02-20
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S315000
Reexamination Certificate
active
11171353
ABSTRACT:
A NAND type dual bit nitride read only memory and a method for fabricating thereof are provided. Firstly, a plurality of isolation layers, which are spaced and parallel to each other are formed in the substrate. Next, a plurality of word lines and a plurality of oxide-nitride-oxide (ONO) stack structures are formed on the substrate. The word lines are spaced and parallel to each other, and also the word lines are perpendicular to the isolation layers. Each of the ONO stack structure is located between the corresponding word line and the substrate. And then a plurality of discontinuous bit lines, which are located between the word lines and between the isolation layers are formed on the substrate. The structure of the present invention of the NAND type dual bit nitride read only memory is similar to that of a complementary metal-oxide semiconductor (CMOS), and their fabrication processes are fully compatible.
REFERENCES:
patent: 5384743 (1995-01-01), Rouy
patent: 5963465 (1999-10-01), Eitan
Huynh Andy
Macronix International Co. Ltd.
Nguyen Thinh T
Rabin & Berdo PC
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