Method for fabricating n-type carbon nanotube device

Details Method for fabricating n-type carbon nanotube device Method for fabricating n-type carbon nanotube device

2006-02-21

2006-02-21

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S585000

Reexamination Certificate

active

07001805

ABSTRACT:
A method for fabricating an n-type carbon nanotube device, characterized in that thermal annealing and plasma-enhanced chemical vapor-phased deposition (PECVD) are employed to form a non-oxide gate layer on a carbon nanotube device. Moreover, the inherently p-type carbon nanotube can be used to fabricate an n-type carbon nanotube device with reliable device characteristics and high manufacturing compatibility.

REFERENCES:
patent: 6472705 (2002-10-01), Bethune et al.
patent: 2002/0113335 (2002-08-01), Lobovsky et al.
Wind et al., “vertical scaling of carbon nanotube field-effect transistors using top gate electrode,” applied physics letter, vol. 80, pp. 3817-3819, May 2002.
Martel et al., “carbon nanotube field-effect transistors and logic circuits,” IEEE, pp. 94-98, Jun. 2002.
Chang et al., “ULSI technology,” pp. 211, 1996.
Martel et al., “Carbon nanotube field-effect transistors and logic circuits,” IEEE, pp. 94-98, Jun. 2002.

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