Method for fabricating MOS transistors

Details Method for fabricating MOS transistors Method for fabricating MOS transistors

2005-02-08

2005-02-08

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S217000, C438S223000, C438S227000, C438S231000, C438S291000, C438S298000, C438S305000, C438S585000, C438S595000, C438S740000, C438S751000, C438S756000, C438S757000

Reexamination Certificate

active

06852599

ABSTRACT:
A method for fabricating a metal oxide semiconductor (MOS) transistor, which can reduce the junction capacitance without degradation of transistor characteristics including forming a buffer oxide layer on a semiconductor substrate; successively conducting ion implantations for well formation and field stop formation in the substrate through the buffer oxide layer; removing the buffer oxide layer; forming and patterning a sacrificial layer to form a trench successively conducting ion implantations for threshold voltage adjustment and punch stop formation on the semiconductor substrate area exposed by the trench; forming a gate oxide layer on the exposed surface of the substrate; forming a polysilicon layer so as to completely fill the trench; polishing the polysilicon layer to form a gate electrode; removing the sacrificial layer; forming an LDD region in the substrate; forming spacers on side walls of the gate electrode; and forming source/drain regions.

REFERENCES:
patent: 3859222 (1975-01-01), Squillace et al.
patent: 5384279 (1995-01-01), Stolmeijer et al.
patent: 5698461 (1997-12-01), Liu
patent: 5750430 (1998-05-01), Son
patent: 5786256 (1998-07-01), Gardner et al.
patent: 5856225 (1999-01-01), Lee et al.
patent: 5877056 (1999-03-01), Wu
patent: 5960270 (1999-09-01), Misra et al.
patent: 6117739 (2000-09-01), Gardner et al.
patent: 6159808 (2000-12-01), Chuang
patent: 6177336 (2001-01-01), Lin et al.
patent: 6180468 (2001-01-01), Yu et al.
patent: 6200865 (2001-03-01), Gardner et al.
patent: 6204148 (2001-03-01), Gardner et al.
patent: 6251760 (2001-06-01), Son
patent: 6300201 (2001-10-01), Shao et al.
patent: 6344397 (2002-02-01), Horstmann et al.
patent: 6395606 (2002-05-01), Huster et al.
patent: 6410394 (2002-06-01), Shao et al.
patent: 6518113 (2003-02-01), Buynoski
patent: 20020137294 (2002-09-01), Wu et al.

Affiliated with

Also associated with

Rating

Method for fabricating MOS transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating MOS transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating MOS transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3448388