Method for fabricating MIS device having GATE insulator of GaS o

Details Method for fabricating MIS device having GATE insulator of GaS o Method for fabricating MIS device having GATE insulator of GaS o

1997-09-04

1999-07-27

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438756, 438757, 257289, 257410, 257631, H01L 21336

Patent

active

059306114

ABSTRACT:
A semiconductor device is fabricated by the step of forming a gate insulation film of a GaS film on a compound semiconductor layer; the step of forming an inter-layer insulation film on the gate insulation film; the step of etching the inter-layer insulation film selectively with respect to the gate insulation film by the use of an etchant containing hydrogen fluoride and ammonium fluoride, the step of exposing a prescribed region of the gate insulation film; and the step of forming a gate electrode on the exposed gate insulation film.

REFERENCES:
patent: 4334349 (1982-06-01), Aoyama et al.
patent: 4546540 (1985-10-01), Ueyanagi et al.
patent: 5316618 (1994-05-01), Van Lintel

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