Method for fabricating micromechanical components

Details Method for fabricating micromechanical components Method for fabricating micromechanical components

2000-07-17

2001-06-26

Bowers, Charles (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

Reexamination Certificate

active

06251699

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a method for fabricating micromechanical components.
BACKGROUND OF THE INVENTION
Methods are already known for fabricating micromechanical components, which employ a so-called sacrificial layer technique. In this context, a sacrificial layer is deposited on a substrate, and a resist layer is then deposited on the sacrificial layer. An element is patterned out of the resist layer, and the sacrificial layer is removed, at least under sections of this resist layer structure, in an etching process. In the process, silicon is used both for the substrate, as well as for the resist layer.
SUMMARY OF THE INVENTION
In contrast, the method according to the present invention advantageously enables the inner mechanical strains in the structure to be controlled with utmost precision.
During the course of a temperature treatment, implanted dopants are introduced into the silicon crystal lattice. By varying the dose of the dopant and the energy of the implantation, one can selectively influence the distribution of the dopant in the structure and, thus, the inner mechanical strains. In addition, mechanical strains in the structure can be reduced by depositing a coating to prevent oxygen from penetrating into the silicon of the structure during the temperature treatment. The method is particularly well suited for applications involving thick resist layers, as are obtained, for example, when an epitaxial process is used to produce the resist layer.


REFERENCES:
patent: 6162657 (2000-12-01), Schiele et al.

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