Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-01
2005-02-01
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S622000, C438S624000, C438S029000
Reexamination Certificate
active
06849533
ABSTRACT:
A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.
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Chang Chih-Kung
Dai Yi-Ming
Hsiao Yu-Kung
Hsiung Chung-Sheng
Hsu Hung-Jen
Guerrero Maria F.
Taiwan Semiconductor Manufacturing Co. LTD
Tung & Associates
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