Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-11-28
2011-11-08
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S305000, C438S515000, C257SE21154
Reexamination Certificate
active
08053847
ABSTRACT:
A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.
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Chen Chao-Chun
Chen Po-Yuan
Chien Chin-Cheng
Hsiao Tsai-Fu
Li Ching-I
Dang Trung
Hsu Winston
Margo Scott
United Microelectronics Corp.
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