Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-08
2011-12-13
Dang, Trung Q (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S515000, C257SE21154
Reexamination Certificate
active
08076210
ABSTRACT:
A method for fabricating a metal-oxide semiconductor transistor is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a gate structure on the semiconductor substrate; and performing a first ion implantation process to implant a first molecular cluster having carbon, boron, and hydrogen into the semiconductor substrate at two sides of the gate structure for forming a doped region, wherein the molecular weight of the first molecular cluster is greater than 100.
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Chen Chao-Chun
Chen Po-Yuan
Chien Chin-Cheng
Hsiao Tsai-Fu
Li Ching-I
Dang Trung Q
Hsu Winston
Margo Scott
United Microelectronics Corp.
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