Method for fabricating metal-oxide-semiconductor field effect tr

Details Method for fabricating metal-oxide-semiconductor field effect tr Method for fabricating metal-oxide-semiconductor field effect tr

1999-09-30

2000-11-14

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, 438301, H01L 218234

Patent

active

061469327

ABSTRACT:
A method for fabricating a metal-oxide-semiconductor field effect transistor (MOSFET) device, includes: a step of dividing a semiconductor substrate into an active region and an isolation region; a step of forming a first insulation layer on the semiconductor substrate; a step of forming a first polycrystal silicon layer on the first insulation layer; a step of forming a first silicide layer on the first polycrystal silicon layer; a step of forming a second insulation layer on the first silicide layer; a step of patterning the second insulation layer; a step of forming a sidewall spacer at the side portions of the second insulation layer pattern; a step of forming a gate by sequentially etching the first silicide layer, the first polycrystal silicon layer and the first insulation layer by using the second insulation layer pattern and the sidewall spacer as a mask; a step for removing the sidewall spacer; a step of forming an oxide film at the side portions of the gate and at the upper portion of the semiconductor substrate; and a step of sequentially performing a process for forming an impurity region operated as a source/drain at the upper portion of the semiconductor substrate which is adjacent to the gate, thereby providing a stable device property and improving a yield.

REFERENCES:
patent: 4987098 (1991-01-01), Nishiura et al.
patent: 5674782 (1997-10-01), Lee et al.
patent: 5753546 (1998-05-01), Koh et al.
patent: 5908791 (1999-06-01), Han et al.
patent: 5956594 (1999-09-01), Yang et al.
patent: 5994192 (1999-11-01), Chen

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