Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-03-05
1999-08-17
Mulpuri, Savitri
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438529, 438639, 438702, 438231, H01L 21336
Patent
active
059407107
ABSTRACT:
A method for fabricating a metal oxide semiconductor field effect transistor wherein source/drain junctions are formed by depositing and etching an oxide film having a desired thickness prior to the formation of a pocket region carried out by a pocket ion implantation after forming a gate oxide film and gate electrode on a channel region formed by implanting impurity ions in a silicon substrate. The pocket region is formed by impurity ions in source/drain regions exposed by etching the oxide film. Accordingly, it is possible to reduce the thermal budget applied to the source/drain junctions. As a result, the lateral diffusion of the impurity ions implanted in the source/drain junctions can be suppressed as much as possible. That is, the transistor fabricated in accordance with the present invention has a channel length longer than that obtained in accordance with the prior art. Accordingly, the transistor can have a highly compact or densely integrated size. Since source/drain electrodes are separately formed from each other in accordance with the present invention, the insulation between the source/drain electrodes can be effectively obtained.
REFERENCES:
patent: 5006477 (1991-04-01), Farb
patent: 5538914 (1996-07-01), Chiu et al.
patent: 5656520 (1997-08-01), Watanabe
Chung In Sool
Woo Young Tag
Hyundai Electronics Industries Co,. Ltd.
Mulpuri Savitri
Nath Gary M.
Novick Harold L.
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