Method for fabricating metal oxide field effect transistors

Details Method for fabricating metal oxide field effect transistors Method for fabricating metal oxide field effect transistors

1996-06-20

1998-05-19

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438230, 438593, 438596, 438655, H01L 218238

Patent

active

057535469

ABSTRACT:
A method for fabricating a metal oxide silicon field effect transistor (MOSFET) wherein a polysilicon layer is deposited over a gate oxide film serving to insulate the gate of the MOSFET from the substrate of the MOSFET. The polysilicon layer serves to prevent the gate oxide film from being etched upon forming a gate electrode using a metal film or metal silicide side walls as a mask. Accordingly, it is possible to prevent a short circuit from occurring between the semiconductor substrate and gate electrode of the MOSFET upon forming the gate electrode.

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