Method for fabricating metal gate structures

Details Method for fabricating metal gate structures Method for fabricating metal gate structures

2005-05-02

2008-10-21

Thai, Luan (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S382000, C257SE29300

Reexamination Certificate

active

07439571

ABSTRACT:
Methods of forming a microelectronic structure are described. Those methods comprise providing a substrate comprising source/drain and gate regions, wherein the gate region comprises a metal layer disposed on a gate dielectric layer, and then laser annealing the substrate.

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Pending U.S. Appl. No. 10/748,345, filed Dec. 29, 2003; inventor: Doczy Office Action dated Nov. 30, 2006.

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