Method for fabricating memory device with recess channel MOS...

Details Method for fabricating memory device with recess channel MOS... Method for fabricating memory device with recess channel MOS...

2007-12-20

2009-08-25

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S296000, C257S296000, C257S301000

Reexamination Certificate

active

07579234

ABSTRACT:
A method for fabricating line type recess channel MOS transistors utilizes a lithography process to form line type gate trenches in the line type recess channel MOS transistors before finishing a STI process. The method can further control the critical dimension variation in a range required in precision semiconductor processes. Therefore, the short problem between the transistors can be avoided.

REFERENCES:
patent: 7273790 (2007-09-01), Kudelka et al.
patent: 2007/0221976 (2007-09-01), Lee
patent: 2007/0224756 (2007-09-01), Lee et al.
patent: 2008/0318388 (2008-12-01), Lin et al.

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