Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-10-11
2005-10-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S248000, C438S247000, C438S388000, C438S390000, C438S391000, C257S304000
Reexamination Certificate
active
06953725
ABSTRACT:
A method of fabricating a memory device having a deep trench capacitor is described. A first conductive layer is formed in the lower and middle portions of a deep trench in a substrate. An undoped semiconductor layer is formed in the upper portion of the deep trench. A mask layer is formed on the substrate, wherein the mask layercovers the periphery of the undoped semiconductor layer that is adjacent to the neighboring region, pre-defined for the active region of the deep trench. An ion implantation process is performed to implant dopants into the undoped semiconductor layer exposed by the mask layer so as to form a second conductive layer. The first and the second conductive layers constitute the upper electrode of the deep trench capacitor.
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Hsu Ping
Wu Kuo-Chien
Fourson George
Jianq Chyun IP Office
Maldonado Julio J.
Nanya Technology Corp.
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