Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-05-15
2007-05-15
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S288000, C438S722000, C438S737000, C438S785000, C438S786000
Reexamination Certificate
active
10954157
ABSTRACT:
The top of the semiconductor body (1) has a sacrificial layer (4) made of nitride applied to it on a region, which is provided for the actuation circuit. A memory layer (6) provided for the memory cells is applied over the entire area and is removed above the sacrificial layer (4) by dry etching. The nitride in the sacrificial layer (4) can then be removed by wet chemical means without starting to etch the semiconductor material.
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Infineon - Technologies AG
Slater & Matsil L.L.P.
Thomas Toniae M.
Wilczewski M.
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