Method for fabricating memory cells using chemical mechanical po

Details Method for fabricating memory cells using chemical mechanical po Method for fabricating memory cells using chemical mechanical po

1996-12-02

1998-11-10

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438397, H01L 218242

Patent

active

058343490

ABSTRACT:
A method for manufacturing an array of stacked capacitors with increased capacitance on a dynamic random access memory (DRAM) device was achieved using chemical mechanical polishing (CMP). The invention utilizes CMP to planarize a polysilicon layer in which the capacitor bottom electrodes are formed using two masking steps and a self-aligning etch-back step to form a very high density array of capacitors for DRAM devices. The method involves depositing and then planarizing a thick first polysilicon layer by CMP over a partially completed DRAM cell. A patterned silicon oxide layer with portions aligned over the node contact openings of the pass transistors (FETs) is formed. Silicon nitride sidewall spacers are formed on the vertical sidewalls of the silicon oxide and a thermal oxide is grown on the first polysilicon layer. After selectively removing the nitride spacers, the polysilicon is etched to form deep trenches with inner sidewalls for the bottom electrodes. The oxide etch mask layers are removed and a second photoresist mask is used to define the outer perimeter (sidewalls) of the array of bottom electrodes. An interelectrode dielectric layer is formed on the bottom electrodes and a second polysilicon layer is deposited and patterned to form the top electrodes and to complete the array of stacked capacitors on the DRAM device.

REFERENCES:
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5332685 (1994-07-01), Park et al.
patent: 5364813 (1994-11-01), Koh
patent: 5386382 (1995-01-01), Ahn
patent: 5429980 (1995-07-01), Yang et al.
patent: 5607874 (1997-03-01), Wang et al.

Affiliated with

Also associated with

Rating

Method for fabricating memory cells using chemical mechanical po does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating memory cells using chemical mechanical po, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating memory cells using chemical mechanical po will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1516194