Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-09-03
1998-07-14
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438420, 438587, H01L 218246
Patent
active
057803447
ABSTRACT:
A method for fabricating a semiconductor device is provided, which includes the steps of: (i-a) forming at least one impurity region of a first conductivity type in a semiconductor substrate; (ii-a) forming a gate insulation film and a gate electrode on the impurity region of the first conductivity type followed by the formation of impurity diffusion layers of a second conductivity type in self-alignment with the gate electrode to yield plurality of transistors; (iii-a) forming low-concentration impurity layers of the second conductivity type in peripheral portions of the impurity diffusion layers of the second conductivity type; and (iv-a) implanting impurity ions of the first conductivity type into desired regions between the plurality of transistors to form device isolation regions, whereby converting at least a part of the low-concentration impurity layers of the second conductivity type to a low-concentration impurity layers of the first conductivity type.
REFERENCES:
patent: 5330924 (1994-07-01), Huang et al.
patent: 5576573 (1996-11-01), Su et al.
patent: 5597753 (1997-01-01), Sheu et al.
Chaudhari Chandra
Sharp Kabushiki Kaisha
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