Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-25
2006-04-25
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C365S158000, C365S171000, C438S003000
Reexamination Certificate
active
07033881
ABSTRACT:
In an MRAM cell, the writing current is encased in a low-reluctance material that is treated in one of several ways to render the material closest to the storage element ineffective to carry magnetic flux, thereby establishing a horseshoe-shaped cross section that focuses the flux toward the storage element.
REFERENCES:
patent: 6261893 (2001-07-01), Chang et al.
patent: 6559511 (2003-05-01), Rizzo
patent: 6865107 (2005-03-01), Anthony et al.
Abraham David W.
Gaidis Michael C.
Kanakasabapathy Sivananda K.
Trouilloud Phillip L.
Nelms David
Nguyen Dao H.
Petraske Eric W.
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