Method for fabricating magnetic field concentrators as...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C365S158000, C365S171000, C438S003000

Reexamination Certificate

active

07033881

ABSTRACT:
In an MRAM cell, the writing current is encased in a low-reluctance material that is treated in one of several ways to render the material closest to the storage element ineffective to carry magnetic flux, thereby establishing a horseshoe-shaped cross section that focuses the flux toward the storage element.

REFERENCES:
patent: 6261893 (2001-07-01), Chang et al.
patent: 6559511 (2003-05-01), Rizzo
patent: 6865107 (2005-03-01), Anthony et al.

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