Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-10-17
2009-06-23
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S455000, C438S514000, C438S766000, C257SE21564, C257SE21567
Reexamination Certificate
active
07550369
ABSTRACT:
The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first crystal orientation are amorphized by ion implantation and then recrystallized into the orientation of a template layer having a different orientation. More generally, the invention relates to the high temperature annealing conditions needed to eliminate the defects remaining in Si-containing single crystal semiconductor materials formed by ion-implant-induced amorphization and templated recrystallization from a layer whose orientation may be the same or different from the amorphous layer's original orientation. The key component of the inventive method is a thermal treatment for minutes to hours in the temperature range 1250-1330° C. to remove the defects remaining after the initial recrystallization anneal. The invention also provides a low-defect density changed-orientation Si formed by ATR for use in hybrid orientation substrates.
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de Souza Joel Pereira
Fogel Keith Edward
Ott John Albrecht
Sadana Devendra Kumar
Saenger Katherine Lynn
International Business Machines - Corporation
Lee Cheung
Lindsay, Jr. Walter L
Percello, Esq Louis
Scully , Scott, Murphy & Presser, P.C.
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