Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-05-23
1999-04-13
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438240, 438253, 438381, 438382, 438396, 438466, H01L 218234
Patent
active
058937315
ABSTRACT:
A low cost method for forming an integrated resistor capacitor combination using only three masks and three mask exposure steps is described. A layer of resistor material is formed on a substrate and patterned forming a resistor and a first capacitor plate. A photoresist mask is then formed covering the resistor and a contact region of the first capacitor plate. The substrate is then immersed in an anodization solution and that part of the first capacitor plate not covered by the photoresist mask is anodized forming a capacitor dielectric. The photoresist mask is then stripped. A layer of conductor material is then formed and patterned to form contacts to the resistor, a contact to the first capacitor plate, and a second capacitor plate.
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Chu Tsung-Yao
Lee Chang-Shu
Ackerman Stephen B
Gurley Lynne A.
Industrial Technology Research Institute
Niebling John F.
Prescott Larry J.
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