Method for fabricating integrated LC/ESI device using SMILE,...

Etching a substrate: processes – Etching of semiconductor material to produce an article...

Reexamination Certificate

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C216S041000, C216S057000, C216S067000, C216S108000, C438S703000, C438S704000, C438S723000, C438S724000, C438S725000

Reexamination Certificate

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06913701

ABSTRACT:
Three fundamental and three derived aspects of the present invention are disclosed. The three fundamental aspects each disclose a process sequence that may be integrated in a full process. The first aspect, designated as “latent masking”, defines a mask in a persistent material like silicon oxide that is held abeyant after definition while intervening processing operations are performed. The latent oxide pattern is then used to mask an etch. The second aspect, designated as “simultaneousmulti-leveletching (SMILE)”, provides a process sequence wherein a first pattern may be given an advanced start relative to a second pattern in etching into an underlying material, such that the first pattern may be etched deeper, shallower, or to the same depth as the second pattern. The third aspect, designated as “delayed LOCOS”, provides a means of defining a contact hole pattern at one stage of a process, then using the defined pattern at a later stage to open the contact holes. The fourth aspect provides a process sequence that incorporates all three fundamental aspects to fabricate an integrated liquid chromatography (LC)/electrospray ionization (ESI) device. The fifth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an ESI device. The sixth aspect provides a process sequence that incorporates two of the fundamental aspects to fabricate an LC device. The process improvements described provide increased manufacturing yield and design latitude in comparison to previously disclosed methods of fabrication.

REFERENCES:
patent: 4764244 (1988-08-01), Chitty et al.
patent: 4911783 (1990-03-01), Voboril
patent: 5006202 (1991-04-01), Hawkins et al.
patent: 5043043 (1991-08-01), Howe et al.
patent: 5131978 (1992-07-01), O'Neill
patent: 5628917 (1997-05-01), MacDonald et al.
patent: 5658471 (1997-08-01), Murthy et al.
patent: 5683591 (1997-11-01), Offenberg
patent: 5690841 (1997-11-01), Elderstig
patent: 5717251 (1998-02-01), Hayashi et al.
patent: 5770465 (1998-06-01), MacDonald et al.
patent: 5804084 (1998-09-01), Nasby et al.
patent: 6020272 (2000-02-01), Fleming
patent: 6071819 (2000-06-01), Tai et al.
patent: 6136243 (2000-10-01), Mehregany et al.
patent: 6174820 (2001-01-01), Habermehl et al.
patent: 6673253 (2004-01-01), Moon et al.
patent: 44 42 023 (1996-05-01), None
Desai, Amish, et al., A MEMS Electrospray Nozzle for Mass Spectroscopy, 1997. pp. 927-930.
Dole, Malcom, et al., Molecular Beams of Macroions, 1968, pp. 2240-2249.
Harrison, D. Jed, et al., Micromachining a Miniaturized Capillary Electrophoresis-Based Chemical Analysis System on a Chip, 1993, pp. 895-897.
He, Bing, et al., Fabrication of Nanocolumns for Liquid Chromatography, 1998, pp. 3790-3797.
Jacobson, Stephen C., et al., High-Speed Separations on a Microchip, 1994, pp/ 1114-1118.
Jacobson, Stephen C., et al., Open Channel Electrochromatography on a Microchip, 1994, pp. 2369-2373.
Ramsey, R.S., et al., Generating Electrospray from Microchip Devices Using Electroosmotic Pumping, 1997, pp. 1174-1178.
Smith, David P., The Electrohydrodynamic Atomization of Liquids, 1986, pp. 527-535.
Wang, Xuan-Oi, et al., Polymer-Based Electrospray Chips for Mass Spectrometry, 1999, pp. 523-528.
Wilm, Matthiasm et al., Analytical Properties of the Nanoelectrospray Ion Source, 1996, pp. 1-8.
Xue, Gifeng, et al., Multichannel Microchip Electrospray Mass Spectrometry, 1997, pp. 426-430.
Yamashita, Masamichi, et al., Electrospray Ion Source. Another Variation of the Free-Jet Theme, 1984, pp. 4451-4459.

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