Method for fabricating high voltage semiconductor device

Details Method for fabricating high voltage semiconductor device Method for fabricating high voltage semiconductor device

2008-07-22

2008-07-22

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S285000, C438S221000, C438S133000, C438S305000, C438S170000, C257S341000, C257SE21443, C257SE21444

Reexamination Certificate

active

11641909

ABSTRACT:
A method for fabricating a high voltage semiconductor device, which comprises a semiconductor substrate; a gate insulation layer formed on the semiconductor substrate; and a gate electrode formed on the gate insulation layer, comprising: forming a mask pattern on the semiconductor substrate; forming a first low-density impurity implanted region on the semiconductor substrate using the mask pattern, in which the first low-density impurity implanted region is overlapped with the gate electrode; selectively removing a part of the mask pattern from a region where the gate electrode is to be formed to form a gate-formation mask; and forming the gate insulating layer and the gate electrode using the gate-formation mask.

REFERENCES:
patent: 5422286 (1995-06-01), Yang
patent: 2003-100771 (2003-04-01), None

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