Method for fabricating high voltage semiconductor device

Details Method for fabricating high voltage semiconductor device Method for fabricating high voltage semiconductor device

1999-04-01

2000-07-04

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438305, 438306, 438595, 438527, 438529, 438231, 438232, 438257, 438258, 438 29, H01L 2100, H01L 21336, H01L 2120, H01L 218238

Patent

active

060838000

ABSTRACT:
The present invention discloses a high voltage semiconductor device with high breakdown voltage without increment in area occupied an increase in the size of junction region. Each junction region includes: (i) a first impurity region of a first conductivity type of a low impurity concentration formed at a predetermined position in the semiconductor substrate, (ii) a second impurity region of a second conductivity type of a medium impurity concentration formed in the first impurity region, a part of the second impurity region being exposed to the surface of the substrate, and (iii) a third impurity region of a first conductivity type of a high impurity concentration, the third impurity region being in contact with the second impurity region, wherein a reverse bias is applied to the third impurity region.

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