Method for fabricating high voltage drift in semiconductor...

Details Method for fabricating high voltage drift in semiconductor... Method for fabricating high voltage drift in semiconductor...

2008-05-22

2010-12-14

Tran, Thien F (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S369000, C438S372000, C438S390000

Reexamination Certificate

active

07851317

ABSTRACT:
A drift of a high voltage transistor formed using an STI (shallow trench isolation). The method for forming a high voltage drift of a semiconductor device can include forming a pad insulating film on a semiconductor substrate having a high voltage well; and then opening a region of the semiconductor substrate by patterning a portion of the pad insulating film; and then etching the opened region of the semiconductor substrate to form a trench; and then forming a first drift in the semiconductor substrate by performing a first ion implantation process using the patterned pad insulating film as a mask; and then forming a device isolation film by gap-filling a device isolation material in the trench; and then removing the patterned pad insulating film and then forming a gate electrode overlapping a portion of the device isolation film; and then forming a second drift connected to the first drift by performing a second ion implantation process in a region of the semiconductor substrate exposed by the gate electrode.

REFERENCES:
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patent: 6306711 (2001-10-01), Yang
patent: 6878603 (2005-04-01), Bromberger et al.
patent: 6900520 (2005-05-01), Lee
patent: 2008/0032445 (2008-02-01), Lee et al.
patent: 2879425 (2007-03-01), None
patent: 2006-173357 (2006-06-01), None
patent: 10-2005-0046054 (2005-05-01), None

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