Method for fabricating high tensile stress film

Details Method for fabricating high tensile stress film Method for fabricating high tensile stress film

2007-06-05

2010-12-07

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S200000, C438S535000, C438S664000, C438S795000

Reexamination Certificate

active

07846804

ABSTRACT:
A method and an apparatus for fabricating a high tensile stress film includes providing a substrate, forming a poly stressor on the substrate, and performing an ultra violet rapid thermal process (UVRTP) for curing the poly stressor and adjusting its tensile stress status, thus the poly stressor serves as a high tensile stress film. Due to a combination of energy from photons and heat, the tensile stress status of the high tensile stress film is adjusted in a relatively shorter process period or under a relatively lower temperature.

REFERENCES:
patent: 5863327 (1999-01-01), Thakur
patent: 2004/0253791 (2004-12-01), Sun
patent: 2005/0158996 (2005-07-01), Kim et al.
patent: 2006/0249795 (2006-11-01), Chen et al.
patent: 2007/0105292 (2007-05-01), Chen
patent: 2008/0206943 (2008-08-01), Chen et al.

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