Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-11-13
2000-09-19
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438773, H01L 21336, H01L 2131
Patent
active
061210951
ABSTRACT:
A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about 6-12 times of the volume of the additional moisture. The method according to the invention improves the electrical quality of the gate oxide by raising the Q.sub.bd and by reducing the leakage current of the gate oxide.
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patent: 5854505 (1998-12-01), Suzuki et al.
patent: 5902452 (1999-05-01), Cheng et al.
Chen Kuen-Chu
Shih Hsueh-Hao
Tai Yu-Shan
Yang H. T.
Huang Jiawei
Lindsay Jr. Walter L.
Niebling John F.
United Integrated Circuits Corp.
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