Method for fabricating forward and reverse blocking devices

Details Method for fabricating forward and reverse blocking devices Method for fabricating forward and reverse blocking devices

2005-08-30

2008-10-28

Potter, Roy K (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S218000

Reexamination Certificate

active

07442630

ABSTRACT:
A power device includes a gate electrode, a source electrode, and a drain electrode provided within an active region of a semiconductor substrate of first conductivity type. A vertical diffusion region of second conductivity is provided at a periphery the active region. The vertical diffusion region extends continuously from a top surface of the substrate to a bottom surface of the substrate. The vertical diffusion region includes an upper portion having a first depth and a lower portion having a second depth that is substantially greater than the first depth.

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