Method for fabricating floating gate

Details Method for fabricating floating gate Method for fabricating floating gate

2005-07-26

2005-07-26

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S315000

Reexamination Certificate

active

06921694

ABSTRACT:
A method for fabricating a floating gate with multiple tips. A semiconductor substrate is provided, on which an insulating layer and a patterned hard mask layer are sequentially formed. The patterned hard mask layer has an opening to expose the surface of the semiconductor substrate. A conducting layer is conformally formed on the patterned hard mask layer, and the opening is filled with the conducting layer. The conducting layer is planarized to expose the surface of the patterned hard mask layer. The conducting layer is thermally oxidized to form an oxide layer, and the patterned hard mask layer is removed.

REFERENCES:
patent: 5907775 (1999-05-01), Tseng
patent: 6165845 (2000-12-01), Hsieh et al.
patent: 6194300 (2001-02-01), Hung et al.

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