Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2005-05-03
2009-02-10
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S142000, C438S159000, C438S161000, C438S201000, C438S926000, C257S411000, C257SE21334, C257SE21453
Reexamination Certificate
active
07488634
ABSTRACT:
A method for fabricating a flash memory device is disclosed that improves hot carrier injection efficiency by forming a gate after forming source and drain implants using a sacrificial insulating layer pattern, which includes forming a sacrificial insulating pattern layer over a flash memory channel region of a semiconductor substrate; forming source and drain regions in the semiconductor substrate by ion implantation using the sacrificial insulating pattern layer as a mask; removing portions of the sacrificial insulating pattern layer; sequentially forming an ONO-type dielectric layer and a gate material layer; selectively etching the gate material layer and at least part of the gate dielectric layer to form a gate; and forming gate sidewall spacers at sides of the gate.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Jr. Carl Whitehead
Malek Maliheh
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