Method for fabricating flash memory device

Details Method for fabricating flash memory device Method for fabricating flash memory device

2008-09-30

2008-09-30

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S248000, C438S264000, C438S266000, C438S286000, C438S296000, C257SE21619

Reexamination Certificate

active

11438991

ABSTRACT:
A method of fabricating a flash memory device. A DDD ion is implanted into a high voltage PMOS transistor and into source and drain junctions of a cell transistor in order to facilitate a pinch-off phenomenon in the gate to drain overlap region and also increase the number of hot carriers. Accordingly, a program characteristic can be improved, a depletion width between source and drain junctions of a cell can be narrowed and the leakage current can be reduced.

REFERENCES:
patent: 2002/0123180 (2002-09-01), Rabkin et al.
patent: 1020010061414 (2001-07-01), None

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