Method for fabricating flash memory device

Details Method for fabricating flash memory device Method for fabricating flash memory device

2007-12-04

2007-12-04

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179

Reexamination Certificate

active

11695052

ABSTRACT:
A method for fabricating a flash memory device including the steps of: providing a substrate having thereon a gate with therein a control gate; lining the substrate and the gate with a liner; forming a silicon layer on the liner; forming a sacrificing layer on the silicon layer; etching the sacrificing layer to expose a portion of the silicon layer; removing the exposed silicon layer to expose a portion of the liner; removing the sacrificing layer; forming a spacer layer on the substrate covering the remaining silicon layer and the exposed liner; etching the spacer layer to form a spacer on sidewall of the gate; and removing the silicon layer that is not covered by the spacer thereby forming floating gate on sidewall of the gate.

REFERENCES:
patent: 5063172 (1991-11-01), Manley
patent: 5073513 (1991-12-01), Lee

Affiliated with

Also associated with

Rating

Method for fabricating flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3829181