Method for fabricating flash memory device

Details Method for fabricating flash memory device Method for fabricating flash memory device

2006-12-26

2006-12-26

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07153742

ABSTRACT:
A flash memory device fabrication method is disclosed. A disclosed method comprises: forming an oxide layer on a substrate; depositing a first polysilicon on the entire surface of the oxide layer and patterning the first polysilicon; depositing an insulating layer on the entire surface of the first polysilicon and patterning the insulating layer to expose the first polysilicon; depositing a second polysilicon on the entire surface of the resulting structure and patterning the second polysilicon; removing the insulating layer; depositing a dielectric layer on the entire surface of the resulting structure; and depositing a third polysilicon on the entire surface of the dielectric layer.

REFERENCES:
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patent: 6670239 (2003-12-01), Yoon
patent: 6768681 (2004-07-01), Kim
patent: 2003/0080373 (2003-05-01), Lee
patent: 2003/0219944 (2003-11-01), Kato et al.

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