Method for fabricating flash memory device

Details Method for fabricating flash memory device Method for fabricating flash memory device

2005-12-20

2005-12-20

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S257000

Reexamination Certificate

active

06977201

ABSTRACT:
A method for fabricating a flash memory includes forming a tunnel oxide layer by depositing a material with a conduction band energy level lower than that of SiO2on a semiconductor substrate; forming a floating gate by depositing polysilicon on the tunnel oxide layer; forming an intergate dielectric layer on the floating gate; forming a control gate on the intergate dielectric layer; forming a gate electrode by patterning the tunnel oxide layer, the floating gate, the intergate dielectric layer and the control gate; and forming a source/drain region by implanting impurities into the substrate using the gate electrode as a mask.

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patent: 6781876 (2004-08-01), Forbes et al.
patent: 1020030050999 (2003-06-01), None

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