Method for fabricating flash memory device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S257000, C438S258000, C438S259000, C438S261000, C438S265000, C438S266000

Reexamination Certificate

active

07977191

ABSTRACT:
A method of forming a flash memory device includes forming a plurality of memory gates over a semiconductor substrate, forming an oxide film over the uppermost surface and sidewalls of the memory gates and then forming a plurality of selective gates on sidewalls of each of the memory gates.

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patent: 2006/0019445 (2006-01-01), Chen
patent: 2006/0170038 (2006-08-01), Wong et al.
patent: 2006/0205154 (2006-09-01), Hung et al.
patent: 2007/0108504 (2007-05-01), Lee et al.
patent: 2008/0142876 (2008-06-01), Arigane et al.

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