Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-12
2011-07-12
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S258000, C438S259000, C438S261000, C438S265000, C438S266000
Reexamination Certificate
active
07977191
ABSTRACT:
A method of forming a flash memory device includes forming a plurality of memory gates over a semiconductor substrate, forming an oxide film over the uppermost surface and sidewalls of the memory gates and then forming a plurality of selective gates on sidewalls of each of the memory gates.
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Au Bac H
Dongbu Hi-Tek Co., Ltd.
Picardat Kevin M
Sherr & Vaughn, PLLC
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