Method for fabricating flash memory cells

Details Method for fabricating flash memory cells Method for fabricating flash memory cells

1997-05-20

1999-05-04

Booth, Richard A

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, H01L 218247

Patent

active

058997180

ABSTRACT:
A method for fabricating flash memory cells having a DDD structure that prevents leakage current during data erasure, that does not require a high temperature drive-in process, and that easily combines with other logic processes. The method for fabricating the flash memory cells utilizes ion implantation through contact windows to establish heavily doped source and drain regions inside previously formed deeply doped source and drain regions to construct the DDD structure.

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