Method for fabricating flash memory cell having a decreased over

Details Method for fabricating flash memory cell having a decreased over Method for fabricating flash memory cell having a decreased over

1995-11-03

1999-03-16

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438529, H01L 218247

Patent

active

058829709

ABSTRACT:
A flash memory cell is fabricated by forming a lightly-doped region with only an implantation procedure to avoid lateral diffusion resulting from an increased overlap between the source region and gate as well as a short channel effect, while surrounding the source region with the lightly-doped region to thereby increase the breakdown voltage between the source region and the substrate.

REFERENCES:
patent: 4852062 (1989-07-01), Baker et al.
patent: 5215936 (1993-06-01), Kinugawa
patent: 5264384 (1993-11-01), Kaya et al.

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