Method for fabricating field effect transistor

Details Method for fabricating field effect transistor Method for fabricating field effect transistor

1998-01-13

2000-01-25

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438424, 438525, H01L 21762, H01L 21336

Patent

active

060178019

ABSTRACT:
A semiconductor device and a method for fabricating the same suitable for increasing its tolerance and packing density are disclosed, the semiconductor device including a semiconductor substrate having a field region placed lower than surface of an active region; an isolation layer formed at the field region; a gate insulating layer and a gate electrode successively formed over the active region; and impurity regions formed in the exposed active region at both sides of the gate electrode.

REFERENCES:
patent: 4528744 (1985-07-01), Shibata
patent: 4716128 (1987-12-01), Schubert et al.
patent: 4786955 (1988-11-01), Plus et al.
patent: 4830971 (1989-05-01), Shibata
patent: 4966861 (1990-10-01), Mieno et al.
patent: 5384473 (1995-01-01), Yoshikawa et al.
patent: 5824586 (1998-10-01), Wollesen
patent: 5849621 (1998-12-01), Gardner et al.

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