Method for fabricating embedded nonvolatile semiconductor...

Details Method for fabricating embedded nonvolatile semiconductor... Method for fabricating embedded nonvolatile semiconductor...

2005-01-11

2005-01-11

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S587000, C438S981000

Reexamination Certificate

active

06841448

ABSTRACT:
A method for fabricating embedded nonvolatile semiconductor memory cells is described. The method includes forming a first insulating layer on a substrate having a high-voltage region, a memory region and a logic region. The first insulating layer is removed in the memory region, and a second insulating layer is formed. A charge-storing layer is formed and patterned along with a third insulating layer. The first to third insulating layers and also the charge-storing layer are removed in the logic region. A fourth insulating layer is formed and a conductive control layer is formed and patterned.

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Ghandi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, 1994, John Wiley and Sons, Inc., New York, 2nd edition, pp. 589, 620.

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