Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-15
2008-01-15
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S289000, C438S663000, C257SE21320, C257SE21337, C257SE21634, C257SE21371
Reexamination Certificate
active
11586586
ABSTRACT:
In a method for fabricating an electronic device including a transistor with a drain extension structure, a correspondence between a size of a gate electrode of the transistor and ion implantation conditions or heat treatment conditions for forming the drain extension structure is previously obtained. This correspondence satisfies that the transistor has a given threshold voltage. After formation of the gate electrode and measurement of the size of the gate electrode, ion implantation conditions or heat treatment conditions for forming the drain extension structure are set based on the previously-obtained correspondence and the measured size of the gate electrode. Ion implantation or heat treatment for forming the drain extension structure is performed under the ion implantation conditions or heat treatment conditions that have been set.
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Kamiyanagi Hisako
Kanazaki Emi
Kawase Fumitoshi
Shibata Satoshi
Matsushita Electric - Industrial Co., Ltd.
Nhu David
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